MBRA2H100T3G datasheet pdf and Diodes - Rectifiers - Single product details from ON Semiconductor stock available on our website
SOT-23
MBRA2H100T3G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
5 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
DO-214AC, SMA
Surface Mount
YES
Number of Pins
2
Diode Element Material
SILICON
Manufacturer Package Identifier
CASE 403D−02
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Additional Feature
FREE WHEELING DIODE
HTS Code
8541.10.00.80
Terminal Position
DUAL
Terminal Form
C BEND
Base Part Number
MBRA2H100
Pin Count
2
Number of Elements
1
Element Configuration
Single
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
8μA @ 100V
Voltage - Forward (Vf) (Max) @ If
790mV @ 2A
Forward Current
2A
Operating Temperature - Junction
-65°C~175°C
Output Current-Max
2A
Application
POWER
Halogen Free
Halogen Free
Forward Voltage
790mV
Max Reverse Voltage (DC)
100V
Average Rectified Current
2A
Number of Phases
1
Peak Reverse Current
8μA
Max Repetitive Reverse Voltage (Vrrm)
100V
Peak Non-Repetitive Surge Current
130A
Max Forward Surge Current (Ifsm)
130A
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
MBRA2H100T3G Product Details
MBRA2H100T3G Overview
A rectified current of 2A volts is averaged for this device.Forward current may not exceed 2A.Output current maximum is 2A.As the data chart indicates, the peak reverse is 8μA.
MBRA2H100T3G Features
an average rectified current of 2A volts 2A is the maximum value the peak reverse is 8μA
MBRA2H100T3G Applications
There are a lot of ON Semiconductor MBRA2H100T3G applications of single-phase diode rectifier.