MBRB2535CTLT4G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available on our website
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MBRB2535CTLT4G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount
YES
Number of Pins
3
Diode Element Material
SILICON
Packaging
Cut Tape (CT)
Published
2007
Series
SWITCHMODE™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Max Operating Temperature
125°C
Min Operating Temperature
-65°C
Additional Feature
FREE WHEELING DIODE
HTS Code
8541.10.00.80
Subcategory
Rectifier Diodes
Voltage - Rated DC
35V
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
25A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MBRB2535CTL
Pin Count
3
JESD-30 Code
R-PDSO-G2
Number of Elements
2
Element Configuration
Common Cathode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
10mA @ 35V
Voltage - Forward (Vf) (Max) @ If
470mV @ 12.5A
Forward Current
12.5A
Max Reverse Leakage Current
10mA
Operating Temperature - Junction
-65°C~125°C
Max Surge Current
150A
Application
POWER
Halogen Free
Halogen Free
Breakdown Voltage
35V
Forward Voltage
550mV
Max Reverse Voltage (DC)
35V
Average Rectified Current
12.5A
Number of Phases
1
Peak Reverse Current
10mA
Max Repetitive Reverse Voltage (Vrrm)
35V
Peak Non-Repetitive Surge Current
150A
Diode Configuration
1 Pair Common Cathode
Max Forward Surge Current (Ifsm)
150A
Height
4.83mm
Length
10.29mm
Width
9.65mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
800
$1.06039
$848.312
1,600
$0.88751
$0.88751
2,400
$0.85869
$1.71738
MBRB2535CTLT4G Product Details
MBRB2535CTLT4G Overview
There will be no operation of this device when the forward voltage is set to 550mV.In order to prevent the surge current from exceeding 150A, it should be monitored.The device operates when the forward voltage is set to 12.5A.A current of 25A can be drawn from the part.There is a reverse voltage peak of 10mA on devices like this one.The maximum reverse leakage current from this semiconductor is 10mA, which corresponds to the reverse leakage current from that device when reverse biased.
MBRB2535CTLT4G Features
550mV forward voltage a peak voltage of 10mA a reverse voltage peak of 10mA
MBRB2535CTLT4G Applications
There are a lot of ON Semiconductor MBRB2535CTLT4G applications of rectifier diode array.