MBRB3045CT-1G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available on our website
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MBRB3045CT-1G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 weeks ago)
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount
NO
Number of Pins
3
Diode Element Material
SILICON
Packaging
Tube
Published
2008
Series
SWITCHMODE™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
HTS Code
8541.10.00.80
Subcategory
Rectifier Diodes
Voltage - Rated DC
45V
Terminal Position
SINGLE
Current Rating
30A
Base Part Number
MBRB3045CT
Pin Count
3
Number of Elements
2
Element Configuration
Common Cathode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
200μA @ 45V
Voltage - Forward (Vf) (Max) @ If
620mV @ 15A
Forward Current
30A
Max Reverse Leakage Current
200nA
Operating Temperature - Junction
-65°C~175°C
Max Surge Current
150A
Application
POWER
Forward Voltage
760mV
Max Reverse Voltage (DC)
45V
Average Rectified Current
15A
Number of Phases
1
Peak Reverse Current
200nA
Max Repetitive Reverse Voltage (Vrrm)
45V
Peak Non-Repetitive Surge Current
150A
Diode Configuration
1 Pair Common Cathode
Max Forward Surge Current (Ifsm)
150A
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.695041
$0.695041
10
$0.655699
$6.55699
100
$0.618584
$61.8584
500
$0.583570
$291.785
1000
$0.550537
$550.537
MBRB3045CT-1G Product Details
MBRB3045CT-1G Overview
A forward voltage of 760mV will enable the device to operate.Array is important to monArrayor the surge current and make sure that Array does not exceed 150A.In operation, this device will be set to 30A volts forward.The part can draw a current of 30A.A reverse voltage peak of 200nA is applied to devices like this one.Its maximal reverse leakage current is 200nA, which is the current from that semiconductor device when the device is reverse biased.
MBRB3045CT-1G Features
760mV forward voltage a peak voltage of 200nA a reverse voltage peak of 200nA
MBRB3045CT-1G Applications
There are a lot of ON Semiconductor MBRB3045CT-1G applications of rectifier diode array.