MBRB30H60CT-1G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available on our website
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MBRB30H60CT-1G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Surface Mount
NO
Number of Pins
3
Diode Element Material
SILICON
Packaging
Tube
Published
2008
Series
SWITCHMODE™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Additional Feature
LOW POWER LOSS
HTS Code
8541.10.00.80
Subcategory
Rectifier Diodes
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MBRB30H60CT
Pin Count
3
Number of Elements
2
Element Configuration
Common Cathode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
300μA @ 60V
Voltage - Forward (Vf) (Max) @ If
620mV @ 15A
Forward Current
15A
Max Reverse Leakage Current
300μA
Operating Temperature - Junction
-55°C~175°C
Max Surge Current
260A
Output Current-Max
7.5A
Application
EFFICIENCY
Forward Voltage
780mV
Max Reverse Voltage (DC)
60V
Average Rectified Current
15A
Number of Phases
1
Peak Reverse Current
300μA
Max Repetitive Reverse Voltage (Vrrm)
60V
Peak Non-Repetitive Surge Current
260A
Diode Configuration
1 Pair Common Cathode
Max Forward Surge Current (Ifsm)
260A
Height
9.65mm
Length
10.31mm
Width
4.7mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.475795
$1.475795
10
$1.392259
$13.92259
100
$1.313452
$131.3452
500
$1.239106
$619.553
1000
$1.168968
$1168.968
MBRB30H60CT-1G Product Details
MBRB30H60CT-1G Overview
This device will operate when the forward voltage is set to 780mV.The maximum output voltage can be set to 7.5A.Array is important to monArrayor the surge current and make sure that Array does not exceed 260A.In operation, this device will be set to 15A volts forward.This device is powered with reverse voltage peak of 300μA V.The maximum reverse leakage current from this semiconductor is 300μA, which corresponds to the reverse leakage current from that device when reverse biased.
MBRB30H60CT-1G Features
780mV forward voltage a maximum output voltage of 7.5A a peak voltage of 300μA a reverse voltage peak of 300μA
MBRB30H60CT-1G Applications
There are a lot of ON Semiconductor MBRB30H60CT-1G applications of rectifier diode array.