MBRB30H60CTT4G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available on our website
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MBRB30H60CTT4G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
9 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount
YES
Number of Pins
3
Diode Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2008
Series
SWITCHMODE™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Additional Feature
LOW POWER LOSS
HTS Code
8541.10.00.80
Subcategory
Rectifier Diodes
Terminal Position
SINGLE
Terminal Form
GULL WING
Base Part Number
MBRB30H60CT
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
2
Element Configuration
Common Cathode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
300μA @ 60V
Voltage - Forward (Vf) (Max) @ If
620mV @ 15A
Forward Current
15A
Max Reverse Leakage Current
300μA
Operating Temperature - Junction
-55°C~175°C
Max Surge Current
260A
Output Current-Max
7.5A
Application
EFFICIENCY
Halogen Free
Halogen Free
Forward Voltage
780mV
Max Reverse Voltage (DC)
60V
Average Rectified Current
15A
Number of Phases
1
Peak Reverse Current
300μA
Max Repetitive Reverse Voltage (Vrrm)
60V
Peak Non-Repetitive Surge Current
260A
Diode Configuration
1 Pair Common Cathode
Max Forward Surge Current (Ifsm)
260A
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
800
$0.93480
$747.84
MBRB30H60CTT4G Product Details
MBRB30H60CTT4G Overview
This device will operate when the forward voltage is set to 780mV.A maximum output voltage of 7.5A can be supported.Array is important to monArrayor the surge current and make sure that Array does not exceed 260A.In operation, this device will be set to 15A volts forward.A reverse voltage peak of 300μA is used to power devices like this one.This semiconductor device's maximal reverse leakage current is 300μA kA, which is its reverse leakage current when reverse biased.
MBRB30H60CTT4G Features
780mV forward voltage a maximum output voltage of 7.5A a peak voltage of 300μA a reverse voltage peak of 300μA
MBRB30H60CTT4G Applications
There are a lot of ON Semiconductor MBRB30H60CTT4G applications of rectifier diode array.