MBRB60H100CTT4G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available on our website
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MBRB60H100CTT4G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
9 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount
YES
Number of Pins
3
Diode Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2007
Series
SWITCHMODE™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Additional Feature
LOW POWER LOSS
HTS Code
8541.10.00.80
Subcategory
Rectifier Diodes
Terminal Position
SINGLE
Terminal Form
GULL WING
Base Part Number
MBRB60H100CT
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
2
Element Configuration
Common Cathode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
10μA @ 100V
Voltage - Forward (Vf) (Max) @ If
840mV @ 30A
Forward Current
30A
Max Reverse Leakage Current
100μA
Operating Temperature - Junction
175°C Max
Max Surge Current
350A
Application
EFFICIENCY
Halogen Free
Halogen Free
Forward Voltage
980mV
Max Reverse Voltage (DC)
100V
Average Rectified Current
30A
Number of Phases
1
Peak Reverse Current
100μA
Max Repetitive Reverse Voltage (Vrrm)
100V
Peak Non-Repetitive Surge Current
350A
Diode Configuration
1 Pair Common Cathode
Max Forward Surge Current (Ifsm)
350A
Height
4.83mm
Length
10.29mm
Width
9.65mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
800
$1.06068
$848.544
MBRB60H100CTT4G Product Details
MBRB60H100CTT4G Overview
As long as the forward voltage is set to 980mV, the device will operate.Surge currents should be monitored and prevented from exceeding 350A.There will be no operation of this device when the forward voltage is set to 30A.Devices like this one are powered with a reverse voltage peak of 100μA.A semiconductor device's maximum reverse leakage current is 100μA, which is the current created by its reverse bias.
MBRB60H100CTT4G Features
980mV forward voltage a peak voltage of 100μA a reverse voltage peak of 100μA
MBRB60H100CTT4G Applications
There are a lot of ON Semiconductor MBRB60H100CTT4G applications of rectifier diode array.