MBRD660CT datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available on our website
SOT-23
MBRD660CT Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Supplier Device Package
DPAK
Packaging
Tube
Published
2005
Series
SWITCHMODE™
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Voltage - Rated DC
60V
Current Rating
6A
Base Part Number
MBRD660CT
Element Configuration
Common Cathode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
100μA @ 60V
Voltage - Forward (Vf) (Max) @ If
700mV @ 3A
Max Reverse Leakage Current
100μA
Operating Temperature - Junction
-65°C~175°C
Max Surge Current
75A
Voltage - DC Reverse (Vr) (Max)
60V
Breakdown Voltage
60V
Current - Average Rectified (Io)
3A
Forward Voltage
900mV
Max Reverse Voltage (DC)
60V
Average Rectified Current
3A
Peak Non-Repetitive Surge Current
75A
Diode Configuration
1 Pair Common Cathode
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.741067
$0.741067
10
$0.699120
$6.9912
100
$0.659547
$65.9547
500
$0.622214
$311.107
1000
$0.586995
$586.995
MBRD660CT Product Details
MBRD660CT Overview
A forward voltage of 900mV will enable the device to operate.Maintaining a surge current under 75A and not letting it exceed it is the key to preventing it.Array is possible to draw current from the part of 6A.When reverse biased, its maximal reverse leakage current is 100μA, which is the current flowing from that semiconductor device.
MBRD660CT Features
900mV forward voltage
MBRD660CT Applications
There are a lot of ON Semiconductor MBRD660CT applications of rectifier diode array.