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MBRD660CTT4G

  • MBRD660CTT4G
  • MBRD660CTT4G

MBRD660CTT4G

MBRD660CTT4G

ON Semiconductor

MBRD660CTT4G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available on our website

SOT-23

MBRD660CTT4G Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 13 hours ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Diode Element Material SILICON
Packaging Cut Tape (CT)
Published 2011
Series SWITCHMODE™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Max Operating Temperature 175°C
Min Operating Temperature -65°C
Additional Feature FREE WHEELING DIODE
HTS Code 8541.10.00.80
Voltage - Rated DC 60V
Terminal Position SINGLE
Terminal Form GULL WING
Current Rating 6A
Base Part Number MBRD660CT
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 2
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 100μA @ 60V
Voltage - Forward (Vf) (Max) @ If 700mV @ 3A
Forward Current 6A
Max Reverse Leakage Current 100μA
Operating Temperature - Junction -65°C~175°C
Max Surge Current 75A
Output Current-Max 3A
Application FAST RECOVERY POWER
Halogen Free Halogen Free
Forward Voltage 900mV
Max Reverse Voltage (DC) 60V
Average Rectified Current 3A
Number of Phases 1
Peak Reverse Current 100μA
Max Repetitive Reverse Voltage (Vrrm) 60V
Peak Non-Repetitive Surge Current 75A
Diode Configuration 1 Pair Common Cathode
Max Forward Surge Current (Ifsm) 75A
Height 2.38mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.94000 $0.94
500 $0.9306 $465.3
1000 $0.9212 $921.2
1500 $0.9118 $1367.7
2000 $0.9024 $1804.8
2500 $0.893 $2232.5
MBRD660CTT4G Product Details

MBRD660CTT4G Overview


A forward voltage of 900mV will enable the device to operate.An output voltage of 3A is the maximum it can handle.Keeping the surge current under 75A and preventing it from exceeding it should be the rule.The device operates when the forward voltage is set to 6A.Parts can be powered by currents of 6A.A reverse voltage peak of 100μA is used to power devices like this one.A semiconductor device's maximum reverse leakage current is 100μA, which is the current created by its reverse bias.

MBRD660CTT4G Features


900mV forward voltage
a maximum output voltage of 3A
a peak voltage of 100μA
a reverse voltage peak of 100μA

MBRD660CTT4G Applications


There are a lot of ON Semiconductor MBRD660CTT4G applications of rectifier diode array.

  • Free wheeling diode in low voltage converters
  • Crowbar applications
  • Battery chargers
  • Rectifiers for UBS
  • Rectifiers in switch mode power supplies (SMPS)
  • General Rectification
  • Rectifier for drives applications

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