MGSF1N02LT1G

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Manufacturer part number:MGSF1N02LT1G

Manufacturer:ON Semiconductor

Description:MGSF1N02LT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:MGSF1N02LT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	11 Weeks
Lifecycle Status	ACTIVE (Last Updated: 6 hours ago)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	90MOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Powers
Voltage - Rated DC	20V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	750mA
Pin Count	3
Number of Elements	1
Power Dissipation-Max	400mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	400mW
Turn On Delay Time	2.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	90m Ω @ 1.2A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	125pF @ 5V
Current - Continuous Drain (Id) @ 25°C	750mA Ta
Rise Time	1ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	1 ns
Turn-Off Delay Time	16 ns
Continuous Drain Current (ID)	750mA
Threshold Voltage	1.7V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	0.75A
Drain to Source Breakdown Voltage	20V
Nominal Vgs	1.7 V
Height	1.01mm
Length	3.04mm
Width	1.4mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free