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MJ15022G

MJ15022G

MJ15022G

ON Semiconductor

MJ15022G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

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MJ15022G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Surface Mount NO
Number of Pins 2
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Tray
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 200V
Max Power Dissipation 250W
Terminal Position BOTTOM
Terminal Form PIN/PEG
Current Rating 16A
Frequency 4MHz
Pin Count 2
Number of Elements 1
Element Configuration Single
Power Dissipation 250W
Case Connection COLLECTOR
Transistor Application AMPLIFIER
Gain Bandwidth Product 4MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 200V
Max Collector Current 16A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 8A 4V
Current - Collector Cutoff (Max) 500μA
Vce Saturation (Max) @ Ib, Ic 4V @ 3.2A, 16A
Collector Emitter Breakdown Voltage 200V
Transition Frequency 4MHz
Collector Emitter Saturation Voltage 1.4V
Collector Base Voltage (VCBO) 350V
Emitter Base Voltage (VEBO) 5V
hFE Min 15
Height 8.51mm
Length 39.37mm
Width 26.67mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $8.17000 $8.17
10 $7.37700 $73.77
100 $6.10750 $610.75
500 $5.31834 $2659.17
1,000 $4.63211 $4.63211
MJ15022G Product Details

MJ15022G Overview


DC current gain in this device equals 15 @ 8A 4V, which is the ratio of the base current to the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.4V, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 4V @ 3.2A, 16A means Ic has reached its maximum value(saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.Parts of this part have transition frequencies of 4MHz.Collector current can be as low as 16A volts at its maximum.

MJ15022G Features


the DC current gain for this device is 15 @ 8A 4V
a collector emitter saturation voltage of 1.4V
the vce saturation(Max) is 4V @ 3.2A, 16A
the emitter base voltage is kept at 5V
the current rating of this device is 16A
a transition frequency of 4MHz

MJ15022G Applications


There are a lot of ON Semiconductor MJ15022G applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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