MJD253T4 Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 200mA 1V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 50mA, 500mA.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-4A).The part has a transition frequency of 40MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 4A volts is possible.

MJD253T4 Features

the DC current gain for this device is 40 @ 200mA 1V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 300mV @ 50mA, 500mA
the emitter base voltage is kept at 7V
the current rating of this device is -4A
a transition frequency of 40MHz

MJD253T4 Applications

There are a lot of ON Semiconductor MJD253T4 applications of single BJT transistors.

• Driver
• Muting
• Inverter
• Interface