MJD3055G Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 4A 4V DC current gain.The collector emitter saturation voltage is 1.1V, which allows for maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 8V @ 3.3A, 10A.An emitter's base voltage can be kept at 5V to gain high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 10A.The part has a transition frequency of 2MHz.In extreme cases, the collector current can be as low as 10A volts.

MJD3055G Features

the DC current gain for this device is 20 @ 4A 4V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 8V @ 3.3A, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 2MHz

MJD3055G Applications

There are a lot of ON Semiconductor MJD3055G applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter