MJE3055TTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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MJE3055TTU Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Published
2001
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
60V
Max Power Dissipation
75W
Current Rating
10A
Frequency
2MHz
Base Part Number
MJE3055
Number of Elements
1
Element Configuration
Single
Power Dissipation
600mW
Power - Max
75W
Transistor Application
SWITCHING
Gain Bandwidth Product
2MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 4A 4V
Current - Collector Cutoff (Max)
700μA
Vce Saturation (Max) @ Ib, Ic
8V @ 3.3A, 10A
Collector Emitter Breakdown Voltage
525V
Transition Frequency
2MHz
Collector Emitter Saturation Voltage
1.1V
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
70V
Emitter Base Voltage (VEBO)
5V
hFE Min
20
Height
14.2mm
Length
9.9mm
Width
4.5mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
MJE3055TTU Product Details
MJE3055TTU Overview
In this device, the DC current gain is 20 @ 4A 4V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 1.1V, giving you a wide variety of design options.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 8V @ 3.3A, 10A.With the emitter base voltage set at 5V, an efficient operation can be achieved.The current rating of this fuse is 10A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 2MHz.An input voltage of 60V volts is the breakdown voltage.A maximum collector current of 10A volts can be achieved.
MJE3055TTU Features
the DC current gain for this device is 20 @ 4A 4V a collector emitter saturation voltage of 1.1V the vce saturation(Max) is 8V @ 3.3A, 10A the emitter base voltage is kept at 5V the current rating of this device is 10A a transition frequency of 2MHz
MJE3055TTU Applications
There are a lot of ON Semiconductor MJE3055TTU applications of single BJT transistors.