MJE5851G Overview
In this device, the DC current gain is 5 @ 5A 5V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 2V, it allows for maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 5V @ 3A, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.This device has a current rating of -8A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Single BJT transistor is possible for the collector current to fall as low as 8A volts at Single BJT transistors maximum.
MJE5851G Features
the DC current gain for this device is 5 @ 5A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 5V @ 3A, 8A
the emitter base voltage is kept at 6V
the current rating of this device is -8A
MJE5851G Applications
There are a lot of ON Semiconductor MJE5851G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
