MJE703G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MJE703G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
BUILT IN BIAS RESISTOR
Subcategory
Other Transistors
Voltage - Rated DC
-80V
Max Power Dissipation
40W
Peak Reflow Temperature (Cel)
260
Current Rating
-4A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MJE703
Pin Count
3
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
40W
Transistor Application
AMPLIFIER
Halogen Free
Halogen Free
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 2A 3V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
2.8V @ 40mA, 2A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
1MHz
Collector Emitter Saturation Voltage
2.5V
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
100
Height
11.04mm
Length
7.74mm
Width
2.66mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.60000
$0.6
10
$0.52400
$5.24
100
$0.40170
$40.17
500
$0.31752
$158.76
MJE703G Product Details
MJE703G Overview
This device has a DC current gain of 750 @ 2A 3V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2.5V.A VCE saturation (Max) of 2.8V @ 40mA, 2A means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 5V allows for a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.In the part, the transition frequency is 1MHz.A maximum collector current of 4A volts is possible.
MJE703G Features
the DC current gain for this device is 750 @ 2A 3V a collector emitter saturation voltage of 2.5V the vce saturation(Max) is 2.8V @ 40mA, 2A the emitter base voltage is kept at 5V the current rating of this device is -4A a transition frequency of 1MHz
MJE703G Applications
There are a lot of ON Semiconductor MJE703G applications of single BJT transistors.