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MJE703G

MJE703G

MJE703G

ON Semiconductor

MJE703G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJE703G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature BUILT IN BIAS RESISTOR
Subcategory Other Transistors
Voltage - Rated DC -80V
Max Power Dissipation 40W
Peak Reflow Temperature (Cel) 260
Current Rating -4A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MJE703
Pin Count 3
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 40W
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 2A 3V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 2.8V @ 40mA, 2A
Collector Emitter Breakdown Voltage 80V
Transition Frequency 1MHz
Collector Emitter Saturation Voltage 2.5V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
hFE Min 100
Height 11.04mm
Length 7.74mm
Width 2.66mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.60000 $0.6
10 $0.52400 $5.24
100 $0.40170 $40.17
500 $0.31752 $158.76
1,000 $0.25402 $0.25402
MJE703G Product Details

MJE703G Overview


This device has a DC current gain of 750 @ 2A 3V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2.5V.A VCE saturation (Max) of 2.8V @ 40mA, 2A means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 5V allows for a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.In the part, the transition frequency is 1MHz.A maximum collector current of 4A volts is possible.

MJE703G Features


the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.8V @ 40mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -4A
a transition frequency of 1MHz

MJE703G Applications


There are a lot of ON Semiconductor MJE703G applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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