MMBD353LT1G

new-10%

Manufacturer part number:MMBD353LT1G

Manufacturer:ON Semiconductor

Description:MMBD353LT1G datasheet pdf and Diodes - RF product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:MMBD353LT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 6 days ago)
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Number of Pins	3
Diode Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.10.00.60
Capacitance	1pF
Subcategory	Microwave Mixer Diodes
Voltage - Rated DC	7V
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	80mA
Time@Peak Reflow Temperature-Max (s)	40
Base Part Number	MMBD353
Pin Count	3
Number of Elements	2
Element Configuration	Dual
Diode Type	Schottky - 1 Pair Series Connection
Power Dissipation	225mW
Forward Current	10mA
Halogen Free	Halogen Free
Forward Voltage	600mV
Reverse Recovery Time	5 ns
Peak Reverse Current	10μA
Max Repetitive Reverse Voltage (Vrrm)	7V
Capacitance @ Vr, F	1pF @ 0V 1MHz
Reverse Voltage	7V
Max Forward Surge Current (Ifsm)	600mA
Frequency Band	ULTRA HIGH FREQUENCY
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free