MMBD717LT1G datasheet pdf and Diodes - Rectifiers - Arrays product details from ON Semiconductor stock available on our website
SOT-23
MMBD717LT1G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Surface Mount
YES
Number of Pins
3
Diode Element Material
SILICON
Packaging
Tape & Reel (TR)
Published
2004
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Capacitance
2.5pF
Subcategory
Rectifier Diodes
Voltage - Rated DC
20V
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
100mA
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MMBD717
Pin Count
3
Number of Elements
2
Element Configuration
Common Anode
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Type
Schottky
Current - Reverse Leakage @ Vr
1μA @ 10V
Power Dissipation
200mW
Voltage - Forward (Vf) (Max) @ If
370mV @ 1mA
Forward Current
1mA
Max Reverse Leakage Current
1μA
Operating Temperature - Junction
-55°C~150°C
Halogen Free
Halogen Free
Forward Voltage
370mV
Max Reverse Voltage (DC)
20V
Peak Reverse Current
1μA
Max Repetitive Reverse Voltage (Vrrm)
20V
Diode Configuration
1 Pair Common Anode
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.05091
$0.15273
6,000
$0.04452
$0.26712
15,000
$0.03813
$0.57195
30,000
$0.03600
$1.08
75,000
$0.03387
$2.54025
150,000
$0.03174
$4.761
MMBD717LT1G Product Details
MMBD717LT1G Overview
As long as the forward voltage is set to 370mV, the device will operate.In this case, the forward voltage has to be set at 1mA to operate the device.There can be a current drawn from this part of 100mA.Approximately 2.5pF farads of capacitance are found in this device.Array is powered by a reverse voltage peak of 1μA.A semiconductor device's maximum reverse leakage current is 1μA, which is the current created by its reverse bias.Electronic and electrical devices create heat (energy loss) as a result of their primary functions.
MMBD717LT1G Features
370mV forward voltage 2.5pF farads a peak voltage of 1μA a reverse voltage peak of 1μA
MMBD717LT1G Applications
There are a lot of ON Semiconductor MMBD717LT1G applications of rectifier diode array.