MMBF5457LT1G datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website
SOT-23
MMBF5457LT1G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Voltage - Rated DC
25V
Max Power Dissipation
225mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
unknown
Current Rating
5mA
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
MBF5457
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Operating Mode
DEPLETION MODE
Power Dissipation
200mW
FET Type
N-Channel
Transistor Application
AMPLIFIER
Input Capacitance (Ciss) (Max) @ Vds
7pF @ 15V
Continuous Drain Current (ID)
5mA
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
25V
FET Technology
JUNCTION
Current - Drain (Idss) @ Vds (Vgs=0)
1mA @ 15V
Voltage - Cutoff (VGS off) @ Id
500mV @ 10nA
RoHS Status
RoHS Compliant
Lead Free
Lead Free
MMBF5457LT1G Product Details
MMBF5457LT1G Description
MMBF5457LT1G JFET is easily used in a variety of electronic circuits, from amplifiers to switching circuits. Since the junction field effect transistor (JFET) operation depends on the electric field generated by the input gate voltage, it is called the field effect. The field effect is to change the direction or magnitude of the applied electric field perpendicular to the semiconductor surface to control the density or type of majority carriers in the semiconductor conductive layer (channel).