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MMBFJ108

MMBFJ108

MMBFJ108

ON Semiconductor

MMBFJ108 datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website

SOT-23

MMBFJ108 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 24 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 30mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Voltage - Rated DC 25V
Max Power Dissipation 350mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 80mA
Base Part Number MBFJ108
Number of Elements 1
Element Configuration Single
Operating Mode DEPLETION MODE
Power Dissipation 350mW
FET Type N-Channel
Transistor Application SWITCHING
Breakdown Voltage -25V
Drain to Source Voltage (Vdss) 25V
Continuous Drain Current (ID) 80mA
Gate to Source Voltage (Vgs) -25V
FET Technology JUNCTION
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 8Ohm
Current - Drain (Idss) @ Vds (Vgs=0) 80mA @ 15V
Voltage - Cutoff (VGS off) @ Id 3V @ 10nA
Resistance - RDS(On) 8Ohm
Height 1.22mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.18840 $0.5652
6,000 $0.17625 $1.0575
15,000 $0.16409 $2.46135
30,000 $0.15558 $4.6674
MMBFJ108 Product Details

MMBFJ108 Description


The MMBFJ108 is an N-channel JFET developed for digital switching applications that require extremely low ON resistance.


MMBFJ108 Features

25V Drain-gate voltage
-25V Gate-source voltage
10mA Forward gate current



MMBFJ108 Applications

Industrial
Power Management

Related Part Number

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