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MMBFJ177LT1G

  • MMBFJ177LT1G
  • MMBFJ177LT1G

MMBFJ177LT1G

MMBFJ177LT1G

ON Semiconductor

MMBFJ177LT1G datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website

SOT-23

MMBFJ177LT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 8 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Voltage - Rated DC -25V
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -20mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MBFJ177
Pin Count 3
Number of Elements 1
Element Configuration Single
Operating Mode DEPLETION MODE
Power Dissipation 225mW
FET Type P-Channel
Transistor Application CHOPPER
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 11pF @ 10V VGS
Breakdown Voltage 30V
Drain to Source Voltage (Vdss) 25V
Continuous Drain Current (ID) 20mA
Gate to Source Voltage (Vgs) 25V
FET Technology JUNCTION
Drain to Source Resistance 300Ohm
Feedback Cap-Max (Crss) 5.5 pF
Current - Drain (Idss) @ Vds (Vgs=0) 1.5mA @ 15V
Voltage - Cutoff (VGS off) @ Id 800mV @ 10nA
Resistance - RDS(On) 300Ohm
Height 1.01mm
Length 3.04mm
Width 1.4mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.14859 $0.44577
6,000 $0.14001 $0.84006
15,000 $0.13143 $1.97145
30,000 $0.12113 $3.6339
75,000 $0.11684 $8.763
MMBFJ177LT1G Product Details
The ON Semiconductor MMBFJ177LT1G is a JFET transistor designed for use in a variety of applications. This device is a P-channel JFET with a maximum drain-source voltage of 30V and a maximum power dissipation of 0.225W. It is housed in a SOT23 package, making it ideal for use in space-constrained applications. The MMBFJ177LT1G is designed to provide excellent performance in a wide range of applications, including switching, signal processing, and power management. It is also designed to be highly reliable and efficient, making it an ideal choice for any application.

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