MMBFJ211 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from ON Semiconductor stock available on our website
SOT-23
MMBFJ211 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Lifecycle Status
ACTIVE (Last Updated: 12 hours ago)
Mount
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
HTS Code
8541.21.00.95
Subcategory
Other Transistors
Voltage - Rated DC
25V
Max Power Dissipation
225mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
20mA
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
MMBFJ211
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Operating Mode
DEPLETION MODE
Power Dissipation
225mW
Transistor Application
AMPLIFIER
Drain to Source Voltage (Vdss)
25V
Transistor Type
N-Channel JFET
Continuous Drain Current (ID)
20mA
Gate to Source Voltage (Vgs)
-25V
FET Technology
JUNCTION
Highest Frequency Band
VERY HIGH FREQUENCY B
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.119731
$0.119731
10
$0.112954
$1.12954
100
$0.106560
$10.656
500
$0.100528
$50.264
1000
$0.094838
$94.838
MMBFJ211 Product Details
MMBFJ211 Description
Transistors for RF power with a duty cycle of 1% to 12% and operating at frequencies between 1200 and 1400 MHz. These gadgets are appropriate for pulsed applications.
MMBFJ211 Features
These are based on a maximum junction temperature of 150°C.
These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low duty-cycle operations.