MMBT200

new-10%

Manufacturer part number:MMBT200

Manufacturer:ON Semiconductor

Description:MMBT200 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:MMBT200 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	39 Weeks
Lifecycle Status	LAST SHIPMENTS (Last Updated: 2 days ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Weight	30mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2017
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Voltage - Rated DC	-45V
Max Power Dissipation	350mW
Terminal Position	DUAL
Terminal Form	GULL WING
Current Rating	-500mA
Frequency	250MHz
Base Part Number	MMBT200
Number of Elements	1
Element Configuration	Single
Power Dissipation	350mW
Transistor Application	AMPLIFIER
Gain Bandwidth Product	250MHz
Polarity/Channel Type	PNP
Transistor Type	PNP
Collector Emitter Voltage (VCEO)	45V
Max Collector Current	500mA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 150mA 5V
Current - Collector Cutoff (Max)	50nA
Vce Saturation (Max) @ Ib, Ic	400mV @ 20mA, 200mA
Collector Emitter Breakdown Voltage	45V
Transition Frequency	250MHz
Collector Emitter Saturation Voltage	-200mV
Max Breakdown Voltage	45V
Collector Base Voltage (VCBO)	-60V
Emitter Base Voltage (VEBO)	-6V
hFE Min	100
Height	930μm
Length	2.92mm
Width	1.3mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free