MMBT2222A_D87Z datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MMBT2222A_D87Z Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
350mW
Frequency
300MHz
Base Part Number
MMBT2222
Number of Elements
1
Element Configuration
Single
Power Dissipation
350mW
Gain Bandwidth Product
300MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 50mA, 500mA
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
1V
Collector Base Voltage (VCBO)
75V
Emitter Base Voltage (VEBO)
6V
hFE Min
100
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
MMBT2222A_D87Z Product Details
MMBT2222A_D87Z Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 10V DC current gain.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 50mA, 500mA.Emitter base voltages of 6V can achieve high levels of efficiency.During maximum operation, collector current can be as low as 1A volts.
MMBT2222A_D87Z Features
the DC current gain for this device is 100 @ 150mA 10V a collector emitter saturation voltage of 1V the vce saturation(Max) is 1V @ 50mA, 500mA the emitter base voltage is kept at 6V
MMBT2222A_D87Z Applications
There are a lot of ON Semiconductor MMBT2222A_D87Z applications of single BJT transistors.