MMBT3646 Overview

In this device, the DC current gain is 30 @ 30mA 400mV, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 30mA, 300mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.The current rating of this fuse is 300A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.An input voltage of 15V volts is the breakdown voltage.During maximum operation, collector current can be as low as 300mA volts.

MMBT3646 Features

the DC current gain for this device is 30 @ 30mA 400mV
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 30mA, 300mA
the emitter base voltage is kept at 5V
the current rating of this device is 300A

MMBT3646 Applications

There are a lot of ON Semiconductor MMBT3646 applications of single BJT transistors.

• Driver
• Muting
• Interface
• Inverter