MMBT3904SL Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 10mA 1V.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 5mA, 50mA.Keeping the emitter base voltage at 6V can result in a high level of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 300MHz.This device can take an input voltage of 40V volts before it breaks down.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.

MMBT3904SL Features

the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
a transition frequency of 300MHz

MMBT3904SL Applications

There are a lot of ON Semiconductor MMBT3904SL applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter