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MMBT5088

MMBT5088

MMBT5088

ON Semiconductor

MMBT5088 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MMBT5088 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 39 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Supplier Device Package SOT-23
Weight 30mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 30V
Max Power Dissipation 350mW
Current Rating 50mA
Frequency 50MHz
Base Part Number MMBT5088
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 350mW
Power - Max 350mW
Gain Bandwidth Product 50MHz
Transistor Type NPN
Collector Emitter Voltage (VCEO) 30V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 100μA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage 30V
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 100mA
Collector Emitter Saturation Voltage 500mV
Max Breakdown Voltage 30V
Frequency - Transition 50MHz
Collector Base Voltage (VCBO) 35V
Emitter Base Voltage (VEBO) 4.5V
hFE Min 300
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.05336 $0.16008
6,000 $0.04665 $0.2799
15,000 $0.03994 $0.5991
30,000 $0.03770 $1.131
75,000 $0.03546 $2.6595
150,000 $0.03174 $4.761
MMBT5088 Product Details

MMBT5088 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 100μA 5V DC current gain.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Emitter base voltages of 4.5V can achieve high levels of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 50mA current rating.Single BJT transistor can take a breakdown input voltage of 30V volts.Product comes in SOT-23 supplier package.This device displays a 30V maximum voltage - Collector Emitter Breakdown.Maximum collector currents can be below 100mA volts.

MMBT5088 Features


the DC current gain for this device is 300 @ 100μA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 50mA
the supplier device package of SOT-23

MMBT5088 Applications


There are a lot of ON Semiconductor MMBT5088 applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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