MMBT5088 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MMBT5088 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
39 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 2 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Supplier Device Package
SOT-23
Weight
30mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2013
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Voltage - Rated DC
30V
Max Power Dissipation
350mW
Current Rating
50mA
Frequency
50MHz
Base Part Number
MMBT5088
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
350mW
Power - Max
350mW
Gain Bandwidth Product
50MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
30V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 100μA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage
30V
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
100mA
Collector Emitter Saturation Voltage
500mV
Max Breakdown Voltage
30V
Frequency - Transition
50MHz
Collector Base Voltage (VCBO)
35V
Emitter Base Voltage (VEBO)
4.5V
hFE Min
300
Height
6.35mm
Length
6.35mm
Width
6.35mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.05336
$0.16008
6,000
$0.04665
$0.2799
15,000
$0.03994
$0.5991
30,000
$0.03770
$1.131
75,000
$0.03546
$2.6595
150,000
$0.03174
$4.761
MMBT5088 Product Details
MMBT5088 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 100μA 5V DC current gain.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Emitter base voltages of 4.5V can achieve high levels of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 50mA current rating.Single BJT transistor can take a breakdown input voltage of 30V volts.Product comes in SOT-23 supplier package.This device displays a 30V maximum voltage - Collector Emitter Breakdown.Maximum collector currents can be below 100mA volts.
MMBT5088 Features
the DC current gain for this device is 300 @ 100μA 5V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 1mA, 10mA the emitter base voltage is kept at 4.5V the current rating of this device is 50mA the supplier device package of SOT-23
MMBT5088 Applications
There are a lot of ON Semiconductor MMBT5088 applications of single BJT transistors.