MMBT5089LT1 Overview
In this device, the DC current gain is 450 @ 1mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 1mA, 10mA.If the emitter base voltage is kept at 4.5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 50mA.As you can see, the part has a transition frequency of 50MHz.Single BJT transistor is possible to have a collector current as low as 50mA volts at Single BJT transistors maximum.
MMBT5089LT1 Features
the DC current gain for this device is 450 @ 1mA 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 1mA, 10mA
the emitter base voltage is kept at 4.5V
the current rating of this device is 50mA
a transition frequency of 50MHz
MMBT5089LT1 Applications
There are a lot of ON Semiconductor MMBT5089LT1 applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
