MMBT5550 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 60 @ 10mA 5V DC current gain.The collector emitter saturation voltage is 250mV, giving you a wide variety of design options.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.Its current rating is 600mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Breakdown input voltage is 140V volts.SOT-23-3 is the supplier device package for this product.There is a 140V maximal voltage in the device due to collector-emitter breakdown.A maximum collector current of 600mA volts can be achieved.
MMBT5550 Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
the supplier device package of SOT-23-3
MMBT5550 Applications
There are a lot of ON Semiconductor MMBT5550 applications of single BJT transistors.
- Inverter
- Driver
- Muting
- Interface
