MMBTH10

new-10%

Manufacturer part number:MMBTH10

Manufacturer:ON Semiconductor

Description:MMBTH10 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:MMBTH10 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 day ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Supplier Device Package	SOT-23-3 (TO-236)
Weight	30mg
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2007
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Voltage - Rated DC	25V
Max Power Dissipation	225mW
Current Rating	50mA
Frequency	650MHz
Base Part Number	MMBTH10
Number of Elements	1
Polarity	NPN
Element Configuration	Single
Power Dissipation	225mW
Power - Max	225mW
Gain Bandwidth Product	650MHz
Transistor Type	NPN
Collector Emitter Voltage (VCEO)	25V
Max Collector Current	50mA
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 4mA 10V
Collector Emitter Breakdown Voltage	25V
Voltage - Collector Emitter Breakdown (Max)	25V
Current - Collector (Ic) (Max)	50mA
Max Frequency	650MHz
Max Breakdown Voltage	25V
Frequency - Transition	650MHz
Collector Base Voltage (VCBO)	30V
Emitter Base Voltage (VEBO)	3V
hFE Min	60
Continuous Collector Current	50mA
Height	930μm
Length	2.92mm
Width	1.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free