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MPSA12G

MPSA12G

MPSA12G

ON Semiconductor

MPSA12G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MPSA12G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status OBSOLETE (Last Updated: 2 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingBulk
Published 2002
JESD-609 Code e1
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC 20V
Max Power Dissipation625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MPSA12
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Polarity NPN
Element ConfigurationSingle
Power Dissipation625mW
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 10μA, 10mA
Collector Emitter Breakdown Voltage20V
Collector Emitter Saturation Voltage1V
Emitter Base Voltage (VEBO) 10V
hFE Min 20000
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:1396 items

MPSA12G Product Details

MPSA12G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20000 @ 10mA 5V.This design offers maximum flexibility with a collector emitter saturation voltage of 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 10μA, 10mA.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.Maximum collector currents can be below 100nA volts.

MPSA12G Features


the DC current gain for this device is 20000 @ 10mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 10μA, 10mA
the emitter base voltage is kept at 10V

MPSA12G Applications


There are a lot of ON Semiconductor MPSA12G applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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