MPSA12G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MPSA12G Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
OBSOLETE (Last Updated: 2 weeks ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2002
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory
Other Transistors
Voltage - Rated DC
20V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
MPSA12
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
625mW
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce
20000 @ 10mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 10μA, 10mA
Collector Emitter Breakdown Voltage
20V
Collector Emitter Saturation Voltage
1V
Emitter Base Voltage (VEBO)
10V
hFE Min
20000
RoHS Status
RoHS Compliant
Lead Free
Lead Free
MPSA12G Product Details
MPSA12G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20000 @ 10mA 5V.This design offers maximum flexibility with a collector emitter saturation voltage of 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 10μA, 10mA.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.Maximum collector currents can be below 100nA volts.
MPSA12G Features
the DC current gain for this device is 20000 @ 10mA 5V a collector emitter saturation voltage of 1V the vce saturation(Max) is 1V @ 10μA, 10mA the emitter base voltage is kept at 10V
MPSA12G Applications
There are a lot of ON Semiconductor MPSA12G applications of single BJT transistors.