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MPSA12G

MPSA12G

MPSA12G

ON Semiconductor

MPSA12G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MPSA12G Datasheet

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Specifications
Name Value
Type Parameter
Lifecycle Status OBSOLETE (Last Updated: 2 weeks ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Bulk
Published 2002
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Voltage - Rated DC 20V
Max Power Dissipation 625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MPSA12
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 625mW
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 20000 @ 10mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 10μA, 10mA
Collector Emitter Breakdown Voltage 20V
Collector Emitter Saturation Voltage 1V
Emitter Base Voltage (VEBO) 10V
hFE Min 20000
RoHS Status RoHS Compliant
Lead Free Lead Free
MPSA12G Product Details

MPSA12G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20000 @ 10mA 5V.This design offers maximum flexibility with a collector emitter saturation voltage of 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 10μA, 10mA.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.Maximum collector currents can be below 100nA volts.

MPSA12G Features


the DC current gain for this device is 20000 @ 10mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 10μA, 10mA
the emitter base voltage is kept at 10V

MPSA12G Applications


There are a lot of ON Semiconductor MPSA12G applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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