MPSA12G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 20000 @ 10mA 5V.This design offers maximum flexibility with a collector emitter saturation voltage of 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 10μA, 10mA.If the emitter base voltage is kept at 10V, a high level of efficiency can be achieved.Maximum collector currents can be below 100nA volts.
MPSA12G Features
the DC current gain for this device is 20000 @ 10mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 10μA, 10mA
the emitter base voltage is kept at 10V
MPSA12G Applications
There are a lot of ON Semiconductor MPSA12G applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface