MPSA29RLRPG Overview

In this device, the DC current gain is 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 1.2V allows maximum design flexibility.A VCE saturation (Max) of 1.5V @ 100μA, 100mA means Ic has reached its maximum value(saturated).Single BJT transistor is recommended to keep the continuous collector voltage at 500mA in order to achieve high efficiency.Keeping the emitter base voltage at 12V allows for a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.In this part, there is a transition frequency of 200MHz.Single BJT transistor can take a breakdown input voltage of 100V volts.Collector current can be as low as 500mA volts at its maximum.

MPSA29RLRPG Features

the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 12V
the current rating of this device is 500mA
a transition frequency of 200MHz

MPSA29RLRPG Applications

There are a lot of ON Semiconductor MPSA29RLRPG applications of single BJT transistors.

• Muting
• Inverter
• Driver
• Interface