MPSA44RLRAG Overview
This device has a DC current gain of 50 @ 10mA 10V, which is the ratio between the collector current and the base current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 750mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 750mV @ 5mA, 50mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 300mA.Parts of this part have transition frequencies of 20MHz.A breakdown input voltage of 400V volts can be used.A maximum collector current of 300mA volts is possible.
MPSA44RLRAG Features
the DC current gain for this device is 50 @ 10mA 10V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 300mA
a transition frequency of 20MHz
MPSA44RLRAG Applications
There are a lot of ON Semiconductor MPSA44RLRAG applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
