MPSH10G

new-10%

Manufacturer part number:MPSH10G

Manufacturer:ON Semiconductor

Description:MPSH10G datasheet pdf and Transistors - Bipolar (BJT) - RF product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:MPSH10G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 2 days ago)
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Surface Mount	NO
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2006
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	Other Transistors
Voltage - Rated DC	25V
Max Power Dissipation	350W
Terminal Position	BOTTOM
Peak Reflow Temperature (Cel)	260
Current Rating	4mA
Frequency	650MHz
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	MPSH10
Pin Count	3
Number of Elements	1
Element Configuration	Single
Power Dissipation	350W
Power - Max	350mW
Transistor Application	AMPLIFIER
Gain Bandwidth Product	650MHz
Polarity/Channel Type	NPN
Transistor Type	NPN
Collector Emitter Voltage (VCEO)	25V
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 4mA 10V
Collector Emitter Breakdown Voltage	25V
Transition Frequency	650MHz
Collector Emitter Saturation Voltage	500mV
Collector Base Voltage (VCBO)	30V
Emitter Base Voltage (VEBO)	3V
hFE Min	60
Collector-Base Capacitance-Max	0.7pF
Height	5.334mm
Length	5.1816mm
Width	4.191mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free