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MSD2714AT1G

MSD2714AT1G

MSD2714AT1G

ON Semiconductor

Bipolar Transistors - BJT 25V VHF/UHF NPN

SOT-23

MSD2714AT1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory BIP RF Small Signal
Voltage - Rated DC 25V
Max Power Dissipation 225mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 4mA
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power - Max 225mW
Gain Bandwidth Product 650MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 25V
DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 1mA 6V
Collector Emitter Breakdown Voltage 25V
Transition Frequency 650MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 3V
hFE Min 90
Highest Frequency Band ULTRA HIGH FREQUENCY B
Collector-Base Capacitance-Max 0.7pF
RoHS Status RoHS Compliant
Lead Free Lead Free

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