MTD6N15T4G

new-10%

Manufacturer part number:MTD6N15T4G

Manufacturer:ON Semiconductor

Description:MTD6N15T4G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:MTD6N15T4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 4 days ago)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-65°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	300MOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	150V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	6A
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	1.25W Ta 20W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	20W
Case Connection	DRAIN
Turn On Delay Time	50 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	300m Ω @ 3A, 10V
Vgs(th) (Max) @ Id	4.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	6A Tc
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Turn-Off Delay Time	200 ns
Continuous Drain Current (ID)	6A
Threshold Voltage	4.5V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	6A
Drain to Source Breakdown Voltage	150V
Pulsed Drain Current-Max (IDM)	20A
Height	2.38mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free