MTP2P50E

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MTP2P50E

Manufacturer part number:MTP2P50E

Manufacturer:ON Semiconductor

Description:MTP2P50E datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:MTP2P50E Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 5 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
JESD-609 Code	e0
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
Additional Feature	HIGH VOLTAGE
Subcategory	Other Transistors
Voltage - Rated DC	-500V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	240
Reach Compliance Code	not_compliant
Current Rating	-2A
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	75W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	75W
Case Connection	DRAIN
Turn On Delay Time	12 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6 Ω @ 1A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1183pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2A Tc
Gate Charge (Qg) (Max) @ Vgs	27nC @ 10V
Rise Time	14ns
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	19 ns
Turn-Off Delay Time	21 ns
Continuous Drain Current (ID)	2A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	2A
Drain-source On Resistance-Max	6Ohm
Drain to Source Breakdown Voltage	-500V
Pulsed Drain Current-Max (IDM)	6A
Avalanche Energy Rating (Eas)	80 mJ
Height	9.28mm
Length	10.28mm
Width	4.82mm
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead