MUN2111T3G

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MUN2111T3G

Manufacturer part number:MUN2111T3G

Manufacturer:ON Semiconductor

Description:MUN2111T3G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:MUN2111T3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	BUILT-IN BIAS RESISTOR RATIO IS 1
Subcategory	BIP General Purpose Small Signal
Voltage - Rated DC	-50V
Max Power Dissipation	230mW
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-100mA
Time@Peak Reflow Temperature-Max (s)	40
Base Part Number	MUN2111
Pin Count	3
JESD-30 Code	R-PDSO-G3
Qualification Status	Not Qualified
Number of Elements	1
Polarity	PNP
Element Configuration	Single
Power Dissipation	230mW
Transistor Application	SWITCHING
Transistor Type	PNP - Pre-Biased
Collector Emitter Voltage (VCEO)	250mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	35 @ 5mA 10V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage	50V
hFE Min	35
Resistor - Base (R1)	10 k Ω
Continuous Collector Current	100mA
Resistor - Emitter Base (R2)	10 k Ω
RoHS Status	RoHS Compliant
Lead Free	Lead Free