MUN2214T1G

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MUN2214T1G

Manufacturer part number:MUN2214T1G

Manufacturer:ON Semiconductor

Description:MUN2214T1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:MUN2214T1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Number of Pins	3
Packaging	Tape & Reel (TR)
Published	2007
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	BUILT-IN BIAS RESISTOR RATIO IS 4.7
Subcategory	BIP General Purpose Small Signal
Voltage - Rated DC	50V
Max Power Dissipation	230mW
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	100mA
Time@Peak Reflow Temperature-Max (s)	40
Base Part Number	MUN2214
Pin Count	3
Max Output Current	100mA
Operating Supply Voltage	50V
Number of Elements	1
Polarity	NPN
Element Configuration	Single
Power Dissipation	338mW
Transistor Application	SWITCHING
Halogen Free	Halogen Free
Transistor Type	NPN - Pre-Biased
Collector Emitter Voltage (VCEO)	50V
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA 10V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage	50V
Collector Emitter Saturation Voltage	250mV
Max Breakdown Voltage	50V
hFE Min	80
Resistor - Base (R1)	10 k Ω
Continuous Collector Current	100mA
Resistor - Emitter Base (R2)	47 k Ω
Height	1.09mm
Length	2.9mm
Width	1.5mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free