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MUN5214T1G

MUN5214T1G

MUN5214T1G

ON Semiconductor

MUN5214T1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available on our website

SOT-23

MUN5214T1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Surface Mount YES
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 4.7
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Max Power Dissipation 202mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 100mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number MUN52**T
Pin Count 3
Max Output Current 100mA
Operating Supply Voltage 50V
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 202mW
Transistor Application SWITCHING
Halogen Free Halogen Free
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 300μA, 10mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
hFE Min 80
Resistor - Base (R1) 10 k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 47 k Ω
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.02602 $0.07806
6,000 $0.02355 $0.1413
15,000 $0.02059 $0.30885
30,000 $0.01861 $0.5583
75,000 $0.01664 $1.248
150,000 $0.01401 $2.1015
MUN5214T1G Product Details
The ON Semiconductor MUN5214T1G is a NPN Bipolar Digital Transistor (BRT) - Single, Pre-Biased. It is designed for use in digital and analog circuits, and is suitable for a wide range of applications.

Features of the MUN5214T1G include:

• Low saturation voltage
• High current gain
• Low noise
• High switching speed
• Low power consumption
• High reliability
• Pre-biased for easy use

Applications of the MUN5214T1G include:

• Automotive electronics
• Industrial control systems
• Power management systems
• Telecommunications systems
• Consumer electronics
• Medical devices
• Security systems

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