MUN5316DW1T1G

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Manufacturer part number:MUN5316DW1T1G

Manufacturer:ON Semiconductor

Description:TRANS PREBIAS NPN/PNP SOT363

Case Package:SOT-23

Datasheet:MUN5316DW1T1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	2 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Surface Mount	YES
Number of Pins	6
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	BUILT-IN BIAS RESISTOR
Subcategory	BIP General Purpose Small Signal
Voltage - Rated DC	50V
Max Power Dissipation	250mW
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	100mA
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	MUN53**DW1
Pin Count	6
Max Output Current	100mA
Operating Supply Voltage	50V
Number of Elements	2
Polarity	NPN, PNP
Element Configuration	Dual
Power Dissipation	187mW
Transistor Application	SWITCHING
Transistor Type	1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)	50V
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	160 @ 5mA 10V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	250mV @ 1mA, 10mA
Collector Emitter Breakdown Voltage	50V
Max Breakdown Voltage	50V
hFE Min	160
Resistor - Base (R1)	4.7k Ω
Continuous Collector Current	100mA
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free