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MVB50P03HDLT4G

MVB50P03HDLT4G

MVB50P03HDLT4G

ON Semiconductor

INTEGRATED CIRCUIT

SOT-23

MVB50P03HDLT4G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C~150°C TJ
Published 2006
Series Automotive, AEC-Q101
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 125W Tc
FET Type P-Channel
Rds On (Max) @ Id, Vgs 25m Ω @ 25A, 5V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4.9nF @ 25V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) ±15V
RoHS Status RoHS Compliant

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