NDB7060 Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDB7060 Features

75A, 60V. Roscow = 0.0130 @ VGs=10V.

Critical DC electrical parameters specifed at elevated

temperature.

Rugged internal source-drain diode can eliminate the need

for an extemal Zener diode transient suppressor.

175??C maximum junction temperature rating.

High density cell design for extremely low Rosion.

TO-220 and TO-263 (D*PAK) package for both through hole

and surface mount applications.