NDS352P Description

These P-Channel logic level enhancement mode power field effect transistors are made utilizing a high cell density DMOS process that is exclusive to Fairchild. This extremely dense technique is specifically designed to reduce on-state resistance. These components are best suited for low voltage applications where quick high-side switching, low in-line power loss, and a very compact shape surface mount package are required, such as notebook computer power management, portable electronics, and other battery driven circuits.

NDS352P Features

• -0.85A, -20V. RDS(ON) = 0.5W @ VGS = -4.5V.

• Proprietary package design using copper lead frame for superior thermal and electrical capabilities.

• High density cell design for extremely low RDS(ON).

• Exceptional on-resistance and maximum DC current capability.

• Compact industry standard SOT-23 surface mount package.

NDS352P Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial