NDT3055L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
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NDT3055L Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2017
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Resistance
100mOhm
Additional Feature
LOGIC LEVEL COMPATIBLE
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
3.5A
Number of Elements
1
Voltage
40V
Power Dissipation-Max
3W Ta
Element Configuration
Single
Current
32A
Operating Mode
ENHANCEMENT MODE
Power Dissipation
3W
Case Connection
DRAIN
Turn On Delay Time
5 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
100m Ω @ 4A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
345pF @ 25V
Current - Continuous Drain (Id) @ 25°C
4A Ta
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V
Rise Time
7.5ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
7 ns
Turn-Off Delay Time
20 ns
Continuous Drain Current (ID)
4A
Threshold Voltage
1.6V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
Dual Supply Voltage
60V
Nominal Vgs
1.6 V
Height
1.6mm
Length
6.5mm
Width
6.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
4,000
$0.34675
$1.387
8,000
$0.32284
$2.58272
12,000
$0.31088
$3.73056
28,000
$0.30436
$8.52208
NDT3055L Product Details
NDT3055L Description
The NDT3055L is an N-channel logic level enhancement mould MOSFET using high cell density, DMOS technology. This extremely high-density technology has been specifically designed to decrease on-state resistance, provide improved switching performance, and withstand high-energy pulses in avalanche and commutation modes. The onsemi NDT3055L is particularly suited for low voltage applications such as DC/DC converters, PWM motor controls, and other battery-powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.