Welcome to Hotenda.com Online Store!

logo
userjoin
Home

NDT3055L

NDT3055L

NDT3055L

ON Semiconductor

NDT3055L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NDT3055L Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 100mOhm
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 3.5A
Number of Elements 1
Voltage 40V
Power Dissipation-Max 3W Ta
Element Configuration Single
Current 32A
Operating Mode ENHANCEMENT MODE
Power Dissipation 3W
Case Connection DRAIN
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 100m Ω @ 4A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 345pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4A Ta
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 7.5ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 4A
Threshold Voltage 1.6V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Dual Supply Voltage 60V
Nominal Vgs 1.6 V
Height 1.6mm
Length 6.5mm
Width 6.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
4,000 $0.34675 $1.387
8,000 $0.32284 $2.58272
12,000 $0.31088 $3.73056
28,000 $0.30436 $8.52208
NDT3055L Product Details

NDT3055L Description


The NDT3055L is an N-channel logic level enhancement mould MOSFET using high cell density, DMOS technology. This extremely high-density technology has been specifically designed to decrease on-state resistance, provide improved switching performance, and withstand high-energy pulses in avalanche and commutation modes. The onsemi NDT3055L is particularly suited for low voltage applications such as DC/DC converters, PWM motor controls, and other battery-powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.



NDT3055L Features


  • In SOT-223-4 package

  • 4 A, 60 V.  RDS(ON)= 0.100 W @ VGS = 10 V,

                RDS(ON)= 0.120 W @ VGS = 4.5 V.

  • Low drive requirements allow operation directly from logic drivers. VGS(TH) < 2V.

  • High-density cell design for extremely low RDS(ON).

  • High power and current handling capability in a widely used surface mount package.


NDT3055L Applications


  • DC motor control 

  • DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed

  • Power Management 

  • Motor Drive & Control 

  • Automotive


Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News