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NGTD5R65F2WP

NGTD5R65F2WP

NGTD5R65F2WP

ON Semiconductor

DIODE GEN PURP 650V DIE

SOT-23

NGTD5R65F2WP Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case Die
Surface MountYES
Diode Element Material SILICON
PackagingBulk
Pbfree Code yes
Part StatusActive
Number of Terminations 1
Additional FeatureFREE WHEELING DIODE
Terminal Position UPPER
Terminal FormNO LEAD
JESD-30 Code S-XUUC-N1
Operating Temperature (Max) 175°C
Number of Elements 1
Configuration SINGLE
Diode Type Standard
Current - Reverse Leakage @ Vr 1μA @ 650V
Voltage - Forward (Vf) (Max) @ If 1.3V @ 20A
Operating Temperature - Junction 175°C Max
Application FAST RECOVERY
Voltage - DC Reverse (Vr) (Max) 650V
Number of Phases 1
Rep Pk Reverse Voltage-Max 650V
Reverse Current-Max 1μA
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:19043 items

Pricing & Ordering

QuantityUnit PriceExt. Price
938$0.35041$328.68458

About NGTD5R65F2WP

The NGTD5R65F2WP from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features DIODE GEN PURP 650V DIE.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the NGTD5R65F2WP, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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