NJD1718T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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NJD1718T4G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
1.68W
Terminal Form
GULL WING
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Case Connection
COLLECTOR
Power - Max
1.68W
Transistor Application
SWITCHING
Halogen Free
Halogen Free
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 1A
Collector Emitter Breakdown Voltage
50V
Transition Frequency
80MHz
Max Breakdown Voltage
50V
Frequency - Transition
80MHz
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
-5V
hFE Min
70
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.428880
$1.42888
10
$1.348000
$13.48
100
$1.271698
$127.1698
500
$1.199715
$599.8575
1000
$1.131807
$1131.807
NJD1718T4G Product Details
NJD1718T4G Overview
In this device, the DC current gain is 70 @ 500mA 2V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at -5V can result in a high level of efficiency.80MHz is present in the transition frequency.An input voltage of 50V volts is the breakdown voltage.Collector current can be as low as 2A volts at its maximum.
NJD1718T4G Features
the DC current gain for this device is 70 @ 500mA 2V the vce saturation(Max) is 500mV @ 50mA, 1A the emitter base voltage is kept at -5V a transition frequency of 80MHz
NJD1718T4G Applications
There are a lot of ON Semiconductor NJD1718T4G applications of single BJT transistors.