NJVMJD148T4G-VF01 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
NJVMJD148T4G-VF01 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
MJD148
Reference Standard
AEC-Q101
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
1.75W
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
85 @ 500mA 1V
Current - Collector Cutoff (Max)
20μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
4A
Transition Frequency
3MHz
Frequency - Transition
3MHz
RoHS Status
ROHS3 Compliant
NJVMJD148T4G-VF01 Product Details
NJVMJD148T4G-VF01 Overview
This device has a DC current gain of 85 @ 500mA 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 200mA, 2A.Parts of this part have transition frequencies of 3MHz.This device displays a 45V maximum voltage - Collector Emitter Breakdown.
NJVMJD148T4G-VF01 Features
the DC current gain for this device is 85 @ 500mA 1V the vce saturation(Max) is 500mV @ 200mA, 2A a transition frequency of 3MHz
NJVMJD148T4G-VF01 Applications
There are a lot of ON Semiconductor NJVMJD148T4G-VF01 applications of single BJT transistors.