NSBA123EDXV6T1G

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NSBA123EDXV6T1G

Manufacturer part number:NSBA123EDXV6T1G

Manufacturer:ON Semiconductor

Description:NSBA123EDXV6T1G datasheet pdf and Transistors - Bipolar (BJT) - Arrays, Pre-Biased product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:NSBA123EDXV6T1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Surface Mount	YES
Number of Pins	6
Packaging	Tape & Reel (TR)
Published	2012
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Additional Feature	BUILT IN BIAS RESISTOR RATIO IS 1
Subcategory	BIP General Purpose Small Signal
Voltage - Rated DC	-50V
Max Power Dissipation	500mW
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	-100mA
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	NSBA1*
Pin Count	6
Qualification Status	Not Qualified
Number of Elements	2
Polarity	PNP
Element Configuration	Dual
Power Dissipation	357mW
Transistor Type	2 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)	250mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	8 @ 5mA 10V
Current - Collector Cutoff (Max)	500nA
Vce Saturation (Max) @ Ib, Ic	250mV @ 5mA, 10mA
Collector Emitter Breakdown Voltage	50V
hFE Min	8
Resistor - Base (R1)	2.2k Ω
Continuous Collector Current	-100mA
Resistor - Emitter Base (R2)	2.2k Ω
RoHS Status	RoHS Compliant
Lead Free	Lead Free