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NSBC123EPDXV6T1G

  • NSBC123EPDXV6T1G
  • NSBC123EPDXV6T1G

NSBC123EPDXV6T1G

NSBC123EPDXV6T1G

ON Semiconductor

TRANS PREBIAS NPN/PNP SOT563

SOT-23

NSBC123EPDXV6T1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Surface Mount YES
Number of Pins 6
Weight 8.193012mg
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1
Subcategory BIP General Purpose Small Signal
Voltage - Rated DC 50V
Max Power Dissipation 500mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 100mA
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number NSBC1*
Pin Count 6
Qualification Status Not Qualified
Number of Elements 2
Polarity NPN, PNP
Number of Channels 2
Element Configuration Dual
Transistor Application SWITCHING
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 5mA 10V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA
Collector Emitter Breakdown Voltage 50V
hFE Min 8
Resistor - Base (R1) 2.2k Ω
Continuous Collector Current 100mA
Resistor - Emitter Base (R2) 2.2k Ω
Height 550μm
Length 1.6mm
Width 1.2mm
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.78000 $0.78
500 $0.7722 $386.1
1000 $0.7644 $764.4
1500 $0.7566 $1134.9
2000 $0.7488 $1497.6
2500 $0.741 $1852.5
NSBC123EPDXV6T1G Product Details
The ON Semiconductor NSBC123EPDXV6T1G is a pre-biased bipolar transistor array in a SOT563 package. It consists of two NPN and two PNP transistors, each with a built-in base resistor. This device is designed to provide a low-cost, space-saving solution for applications requiring multiple transistors.

Features of the NSBC123EPDXV6T1G include:
• Low-cost, space-saving solution
• Built-in base resistor
• Low saturation voltage
• High current gain
• High switching speed
• Low power consumption
• High reliability

The NSBC123EPDXV6T1G is suitable for a wide range of applications, including power management, motor control, and signal switching. It is also suitable for use in automotive, industrial, and consumer electronics.

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