NSS40300DDR2G

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Manufacturer part number:NSS40300DDR2G

Manufacturer:ON Semiconductor

Description:Bipolar Transistors - BJT DUAL 40V LOW VCE XTR PNP

Case Package:SOT-23

Datasheet:NSS40300DDR2G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	2 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Surface Mount	YES
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	Other Transistors
Max Power Dissipation	783mW
Terminal Form	GULL WING
Pin Count	8
Number of Elements	2
Polarity	PNP
Element Configuration	Dual
Power - Max	653mW
Transistor Application	SWITCHING
Halogen Free	Halogen Free
Gain Bandwidth Product	100MHz
Transistor Type	2 PNP (Dual)
Collector Emitter Voltage (VCEO)	170mV
Max Collector Current	3A
DC Current Gain (hFE) (Min) @ Ic, Vce	180 @ 1A 2V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	170mV @ 200mA, 2A
Collector Emitter Breakdown Voltage	40V
Current - Collector (Ic) (Max)	3A
Transition Frequency	100MHz
Collector Emitter Saturation Voltage	135mV
Collector Base Voltage (VCBO)	-40V
Emitter Base Voltage (VEBO)	-7V
hFE Min	250
Turn Off Time-Max (toff)	530ns
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free